IR absorption spectroscopy of deposition process of amorphous carbon film due to ethylene plasma

Thick Film Deposition of Carbon Nanotubes by Alternating Electrophoresis

Electrophoretic deposition of carbon nanotubes (CNTs) using alternating current electric fields (0.01-1000 Hz) is reported. Pure acetone was used as suspending medium. Two parallel gold electrodes were used as depositing substrate. The effect of depositing parameters such as frequency and three waveforms (sinusoidal, rectangular and triangular) on deposit yield was investigated. According to ou...

Role of carbon atoms in the remote plasma deposition of hydrogenated amorphous carbon

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Amorphous thin film growth: minimal deposition equation

A nonlinear stochastic growth equation is derived from (i) the symmetry principles relevant for the growth of vapor deposited amorphous films, (ii) no excess velocity, and (iii) a low-order expansion in the gradients of the surface profile. A growth instability in the equation is attributed to the deflection of the initially perpendicular incident particles due to attractive forces between the ...

High Rate Deposition of Hydrogenated Amorphous Silicon Using Microwave Plasma Chemical Vapor Deposition Process

Remote Microwave Plasma Enhanced Chemical Vapour Deposition of Amorphous Carbon : Optical Emission Spectroscopy Characterisation of the Afterglow and Growth Rates

Amorphous carbon films were obtained by remote microwave plasma enhanced chemical vapour deposition (RMPECVD). In this process, a mixture of argon and hydrogen is excited in the microwave discharge while methane is injected in the afterglow. The substrates are radio-frequency (RF) biased in order to improve the film properties. Three configurations have been compared : microwave, RF, and mixed ...